cmos工艺里面的pnp型BJT，beta倍数大概多小啊

// ***********************************************************************************
// *       1.8v vertical p+/nwell/psub bipolar model (emitter area=2x2um^2)          *
// ***********************************************************************************
// *
model pnp18a4 bjt type=pnp
+vaf = 551.93 ikf = 4.50e-04
+ise = 1.10e-17 ne = 1.47 br = 1.07e-03
+nr = 1.0 var = 19.0 ikr = 1.79e-03
+isc = 2.00e-17 nc = 1.5 rb = 122.98
+irb = 1.50e-03 rbm = 2.0 re = 2.16
+rc = 17.11 xti = 3.0 eg = 1.16
+tnom = 25.0 nkf = 0.5 tlev = 0
+tlevc = 1 xtb = 0.00 tbf1 = 0.00563
+tbr1 = 0.0012 tikf1 = -0.0043 tnf1 = 1.0e-4
+ctc = 2e-3 cte = 8.76e-4 tvjc = 2.53e-3
+vje = 0.817 mje = 0.415
+vjc = 0.494 mjc = 0.317
+tvje = 1.53e-3
+is = 6.50e-19+dis_pnp18a4
+bf = 3.4502+dbf_pnp18a4
+nf = 1.0+dnf_pnp18a4
+cjc = 2.53E-14+dcjc_pnp18a4
+cje = 5.07E-15+dcje_pnp18a4
// *

怎么看着里面的参数啊?

跑dc仿真就能看到吧，个人常用的两个工艺是分别是2.7和6左右

看工艺文件里面的PCM参数呀，里面给的都是实测的数据

请问工艺文件里面的PCM参数，在哪里啊?我这是 smic18mmrf_1P6M库。可我不知道什么是PCM,以及PCM在哪里?

一般都不会大于10，，，，3-8

Depends on process technology
Beta of vertical / substrate PNP is a strong function of base thickness and doping concentration.
In the substrate PNP BJT structure, N-well is the base terminal.
The thinner base (i.e. the depth of N-well), the higher number for beta. <- minority carrier transmission efficiency will be higher with thinner base.
The higher doping concentration of N-well, the lower beta.
Unfortunately both N-well depth and N-well doping concentration will NOT be optimized for PNP beta.
0.5 um and less advanced technologies: greater than 5
0.18 um: around 3
more advanced: < 1
In general, the more advanced process technology, the lower forward current gain (i.e., beta) of the substrate PNP.

莫非想用这个Sub PNP当输入对管?能实现吗?

+bf = 3.4502+dbf_pnp18a4
應該約為 3.45,
其中 dbf_pnp18a4 應該是與corner有關的參數. 看看model card 的前面部分 BJT_TT 時應該是dbf_pnp18a4=0

秋田dog

    正解！

xuexi le ,duoxie

   非常您的回答！我也刚好想知道怎么从SMIC的库中看出bjt的放大倍数呢。

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