按ALLEN书中一个电路做的带缓冲运放
录入:edatop.com 阅读:
自己按照ALLEN书中的一个电路设计的带缓冲运放,外部参数自己随便定的,器件也用的ALLEN书中的模型,SPICCE仿真后好像还能用,现发上来给大家看看有什么问题?本人第一次做电路没经验,缓冲级也是看书上的电路猜的,其他都还行就是相位上有些奇怪,不过没震荡也看不出啥问题。A0=81DB SR=3V/US(CL=10P) GBW=3.35MHZ(CL=10P) ROUT=12.7MOhm(最大增益时)
VOUT=-1.35--2V(VDD=+-2.5V IOMAX=5MA) PSRR+=90DB PSRR-=83DB CMRR=134DB
下面是接成单位增益形式的频域特性
下面是开环的频域特性
程序如下:
LOWROUT2TEST
CL 10 0 10P
VIN+ 20 0 DC 0 AC 1.0
*VIN- 2 3 DC 0
*VIN+ 20 0 DC 0.0 SIN(0 1 1K)
*VIN+ 20 0 DC 0.0 PWL(0 -1.2 10N -1.2 20N 1.2 2U 1.2 2.01U -1.2 4U -1.2 4.01U
*+ 1.2 6U 1.2 6.01U -1.2 8U -1.2 )
VOS 1 20 DC 0.0001
VDD 4 0 DC 2.5
VSS 0 5 DC 2.5
X1 1 0 3 4 5 CASCODEOP
*RF1 2 0 1K
*RF2 2 10 1K
*RL 10 0 400
CC1 3 0 34P
M22 4 3 6 6 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M21 6 7 5 5 NMOS1 W=44U L=1U AD=264P AS=264P PD=100U PS=100U
VBIAS 7 5 0.791
M23 10 13 4 4 PMOS1 W=400U L=0.5U AD=2400P AS=2400P PD=812U PS=812U
M22A 4 10 9 9 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M24 9 7 5 5 NMOS1 W=41U L=1U AD=246P AS=246P PD=94U PS=94U
M23A 10 8 5 5 NMOS1 W=182U L=0.5U AD=1092P AS=1092P PD=376U PS=376U
M25 9 11 5 5 NMOS1 W=20U L=1U AD=120P AS=120P PD=52U PS=52U
M26 11 11 5 5 NMOS1 W=2U L=1U AD=12P AS=12P PD=16U PS=16U
M28 11 11 12 12 PMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M27 12 13 4 4 PMOS1 W=8U L=1U AD=48P AS=48P PD=28U PS=28U
*MC1 14 5 13 4 PMOS1 W=100U L=1U
*RZ1 14 13 1.119K
CC2 13 10 4P
*MC2 15 4 8 5 NMOS1 W=60U L=1U
*RZ2 15 8 1.27K
CC3 10 8 4P
X2 10 3 13 4 5 OP2
X3 9 6 8 4 5 OP3
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
.SUBCKT OP2 1 2 3 5 6
M1 3 2 7 7 NMOS1 W=29U L=1U AD=174P AS=174P PD=70U PS=70U
M2 4 1 7 7 NMOS1 W=29U L=1U AD=174P AS=174P PD=70U PS=70U
M3 7 8 6 6 NMOS1 W=10U L=1U AD=60P AS=60P PD=32U PS=32U
VBIAS 8 6 0.834
M4 3 4 5 5 PMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M5 4 4 5 5 PMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
.ENDS
.SUBCKT OP3 1 2 6 5 8
M1 6 2 3 3 PMOS1 W=64U L=1U AD=384P AS=384P PD=140U PS=140U
M2 7 1 3 3 PMOS1 W=64U L=1U AD=384P AS=384P PD= 140U PS=140U
M3 6 7 8 8 NMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M4 7 7 8 8 NMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M5 3 4 5 5 PMOS1 W=3U L=1U AD=18P AS=18P PD=18U PS=18U
VBIAS 5 4 1.094
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
.ENDS
.SUBCKT CASCODEOP 1 2 15 9 5
M1 6 1 3 3 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M2 7 2 3 3 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M3 3 4 5 5 NMOS1 W=219U L=1U AD=1314P AS=1314P PD=450U PS=450U
M4 6 8 9 9 PMOS1 W=150U L=1U AD=900P AS=900P PD=312U PS=312U
M5 7 8 9 9 PMOS1 W=150U L=1U AD=900P AS=900P PD=312U PS=312U
M6 12 11 6 6 PMOS1 W=96U L=1U AD=576P AS=576P PD=204U PS=204U
M7 15 11 7 7 PMOS1 W=96U L=1U AD=576P AS=576P PD=204U PS=204U
M8 13 12 14 14 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M9 15 12 16 16 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M10 14 13 5 5 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M11 16 13 5 5 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M12 11 4 5 5 NMOS1 W=164U L=1U AD=984P AS=984P PD=340U PS=340U
M13 8 11 10 10 PMOS1 W=133U L=1U AD=798P AS=798P PD=278U PS=278U
M14 10 8 9 9 PMOS1 W=75U L=1U AD=450P AS=450P PD=162U PS=162U
R1 8 11 4K
R2 12 13 2.5K
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
VBIAS 4 5 0.791
.ENDS
.DC VIN+ -2.5 2.5 0.1
.PRINT DC V(3)
*.TRAN 0.001U 10U
*.PRINT TRAN V(10) V(20)
.AC DEC 100 1 50MEG
.PRINT AC VDB(10) VP(10)
*.TF V(10) VIN+
.END
VOUT=-1.35--2V(VDD=+-2.5V IOMAX=5MA) PSRR+=90DB PSRR-=83DB CMRR=134DB
下面是接成单位增益形式的频域特性
下面是开环的频域特性
程序如下:
LOWROUT2TEST
CL 10 0 10P
VIN+ 20 0 DC 0 AC 1.0
*VIN- 2 3 DC 0
*VIN+ 20 0 DC 0.0 SIN(0 1 1K)
*VIN+ 20 0 DC 0.0 PWL(0 -1.2 10N -1.2 20N 1.2 2U 1.2 2.01U -1.2 4U -1.2 4.01U
*+ 1.2 6U 1.2 6.01U -1.2 8U -1.2 )
VOS 1 20 DC 0.0001
VDD 4 0 DC 2.5
VSS 0 5 DC 2.5
X1 1 0 3 4 5 CASCODEOP
*RF1 2 0 1K
*RF2 2 10 1K
*RL 10 0 400
CC1 3 0 34P
M22 4 3 6 6 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M21 6 7 5 5 NMOS1 W=44U L=1U AD=264P AS=264P PD=100U PS=100U
VBIAS 7 5 0.791
M23 10 13 4 4 PMOS1 W=400U L=0.5U AD=2400P AS=2400P PD=812U PS=812U
M22A 4 10 9 9 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M24 9 7 5 5 NMOS1 W=41U L=1U AD=246P AS=246P PD=94U PS=94U
M23A 10 8 5 5 NMOS1 W=182U L=0.5U AD=1092P AS=1092P PD=376U PS=376U
M25 9 11 5 5 NMOS1 W=20U L=1U AD=120P AS=120P PD=52U PS=52U
M26 11 11 5 5 NMOS1 W=2U L=1U AD=12P AS=12P PD=16U PS=16U
M28 11 11 12 12 PMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M27 12 13 4 4 PMOS1 W=8U L=1U AD=48P AS=48P PD=28U PS=28U
*MC1 14 5 13 4 PMOS1 W=100U L=1U
*RZ1 14 13 1.119K
CC2 13 10 4P
*MC2 15 4 8 5 NMOS1 W=60U L=1U
*RZ2 15 8 1.27K
CC3 10 8 4P
X2 10 3 13 4 5 OP2
X3 9 6 8 4 5 OP3
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
.SUBCKT OP2 1 2 3 5 6
M1 3 2 7 7 NMOS1 W=29U L=1U AD=174P AS=174P PD=70U PS=70U
M2 4 1 7 7 NMOS1 W=29U L=1U AD=174P AS=174P PD=70U PS=70U
M3 7 8 6 6 NMOS1 W=10U L=1U AD=60P AS=60P PD=32U PS=32U
VBIAS 8 6 0.834
M4 3 4 5 5 PMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M5 4 4 5 5 PMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
.ENDS
.SUBCKT OP3 1 2 6 5 8
M1 6 2 3 3 PMOS1 W=64U L=1U AD=384P AS=384P PD=140U PS=140U
M2 7 1 3 3 PMOS1 W=64U L=1U AD=384P AS=384P PD= 140U PS=140U
M3 6 7 8 8 NMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M4 7 7 8 8 NMOS1 W=1U L=1U AD=6P AS=6P PD=14U PS=14U
M5 3 4 5 5 PMOS1 W=3U L=1U AD=18P AS=18P PD=18U PS=18U
VBIAS 5 4 1.094
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
.ENDS
.SUBCKT CASCODEOP 1 2 15 9 5
M1 6 1 3 3 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M2 7 2 3 3 NMOS1 W=36U L=1U AD=216P AS=216P PD=84U PS=84U
M3 3 4 5 5 NMOS1 W=219U L=1U AD=1314P AS=1314P PD=450U PS=450U
M4 6 8 9 9 PMOS1 W=150U L=1U AD=900P AS=900P PD=312U PS=312U
M5 7 8 9 9 PMOS1 W=150U L=1U AD=900P AS=900P PD=312U PS=312U
M6 12 11 6 6 PMOS1 W=96U L=1U AD=576P AS=576P PD=204U PS=204U
M7 15 11 7 7 PMOS1 W=96U L=1U AD=576P AS=576P PD=204U PS=204U
M8 13 12 14 14 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M9 15 12 16 16 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M10 14 13 5 5 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M11 16 13 5 5 NMOS1 W=174U L=1U AD=1044P AS=1044P PD=360U PS=360U
M12 11 4 5 5 NMOS1 W=164U L=1U AD=984P AS=984P PD=340U PS=340U
M13 8 11 10 10 PMOS1 W=133U L=1U AD=798P AS=798P PD=278U PS=278U
M14 10 8 9 9 PMOS1 W=75U L=1U AD=450P AS=450P PD=162U PS=162U
R1 8 11 4K
R2 12 13 2.5K
.MODEL NMOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGB0=700P CGS0=220P CGD0=220P CJ=770U
+CJSW=380P LD=0.016U TOX=14N
.MODEL PMOS1 PMOS VT0=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8
+MJ=0.5 MJSW=0.35 CGB0=700P CGS0=220P CGD0=220P CJ=560U
+CJSW=350P LD=0.014U TOX=14N
VBIAS 4 5 0.791
.ENDS
.DC VIN+ -2.5 2.5 0.1
.PRINT DC V(3)
*.TRAN 0.001U 10U
*.PRINT TRAN V(10) V(20)
.AC DEC 100 1 50MEG
.PRINT AC VDB(10) VP(10)
*.TF V(10) VIN+
.END
申明:网友回复良莠不齐,仅供参考。如需专业解答,请学习本站推出的微波射频专业培训课程。
上一篇:再问FFT,计算信号能量bin的数目
下一篇:一些找工作的问题想请前辈指导指导