GaAs package level reliability
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一般来说, III-V器件 如果从半导体厂拿来的时候, 可靠性都是经过测量的(WAFER LEVEL RELIABILITY), 但是变成产品, 要封装组装成MODULE, 因此,不知到大家是否知道PACKAGE LEVEL RELIABILITY 经历过哪些测试, 条件如何, 比如GAAS。III-V 和CMOS不一样,
not like TDDB, HCI which is frozen for CMOS technology.
感觉上应该和WLR 一样,
1. 比如 常见得check GaAs normal failure MODE
a: gate contact sinking and channel degradation HCI
b: ohmic contact degradation at source/drain
c: Trap level effect
+ packaged induced Hydrogen poison
2. Is there any testkey must be put into the testchip to debug failure rootcause , interconnect,junction, contact or others.
Is there any testkey which can alert potential reliability issue
希望大家一起学习交流。
not like TDDB, HCI which is frozen for CMOS technology.
感觉上应该和WLR 一样,
1. 比如 常见得check GaAs normal failure MODE
a: gate contact sinking and channel degradation HCI
b: ohmic contact degradation at source/drain
c: Trap level effect
+ packaged induced Hydrogen poison
2. Is there any testkey must be put into the testchip to debug failure rootcause , interconnect,junction, contact or others.
Is there any testkey which can alert potential reliability issue
希望大家一起学习交流。
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