新材料拉动RF功率器件市场

[据ABI Research网站2011年1月26日报道]虽然RF（射频）功率半导体在无线基础设施市场仍处于停滞状态，但在其他市场，尤其是军品市场，形势已开始好转。据美国市场研究机构ABI Research最新报告指出，GaN（氮化镓）作为未来很有潜力的RF功率器件制备材料，将进一步获得市场认可。
GaN兼具GaAs（砷化镓）的高频性能和硅基LDMOS器件的功率处理能力，现已成为主流技术，取得了一定市场份额，并将在未来市场中占有一席之地。
不同于无线基础设施市场，军品市场的RF功率器件交易表现出强劲上扬的态势。虽然生产商集中在几个主要工业化国家，但随着军品市场的全球化，买方可来自世界各地。
RF功率器件是指频率达到3.8GHz且输出功率在5W以上的半导体器件，可以满足现有大部分应用需求。


(工业和信息化部电子科学技术情报研究所 陈 思)


原文:


Military Spending and GaN Adoption Driving RF Power Semiconductor Markets, Says ABI Research

10:48 GMT, January 26, 2011 SCOTTSDALE, Ariz. | Although spending on RF power semiconductors in wireless infrastructure markets has continued to stagnate, other markets – notably the military – are seeing increased activity. Also, according to a new study from ABI Research, Gallium Nitride – long seen as a promising new “material of choice” for RF power semiconductors – is continuing to gain some market traction.
GaN bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide combined with the power handling capabilities of Silicon LDMOS. It is now a mainstream technology which has achieved measurable market share and in future will capture a substantial part of the market.
Other than wireless infrastructure, the vertical market showing the strongest uptick in the RF power semiconductor business has been the military. While the producers of these devices are located in the major industrialized countries, the military market is now so global that equipment buyers can come from anywhere.
“RF Power Semiconductors” examines RF power semiconductor devices that have power outputs of greater than 5 watts and operate at frequencies of up to 3.8 GHz, which represent the bulk of applications in use today.