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手机大厂的ＥＳＤ经验总结
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手机大厂的ＥＳＤ经验总结，英文写就（不喜英文者勿下），共22页，叙述详尽，图文并茂。部分文字如下：
During qualification, there are some ESD problems,
1.There will be power off when discharging to I/O connector at contact >3.5KV,
2.There will be power off when discharging to T-flash connector at air >7KV,
3.There will be communication lost and can’t read SIM card when discharging to keypad, T-flash connector and gap at air >7KV.
For these problems, the solutions are as follow,
Problem 1 improvement:
Increase the GND area of the battery’s cathode by scraping the green painting near the cathode to expose more GND and linking the cathode with the exposed GND by solder.
After improvement, it is OK for ESD at contact 6KV on the I/O connector.
Problem 2 improvement:
Link the metal panel of the back cover with the SIM card shielding cover by conductive fabric,
After improvement, it is OK for ESD at air 10KV on the position of T-flash connector.
Problem 3 improvement:
Link the metal panel of the back cover with the SIM card shielding cover by conductive fabric,
After improvement, it is OK for ESD at air 10KV on the position of keypad, T-flash connector and gap.
After modifications above, the mobile can pass air 10KV and contact 6KV.
【文件名】:08217-我做过的几个项目ESD解决问题的方法.part1.rar
XPuqKkgc.rar (187.33 KB)
RJyEtsGr.rar
手机大厂的ＥＳＤ经验总结
7KXDae97.rar
手机大厂的ＥＳＤ经验总结
During qualification, there are some ESD problems,
1.There will be power off when discharging to I/O connector at contact >3.5KV,
2.There will be power off when discharging to T-flash connector at air >7KV,
3.There will be communication lost and can’t read SIM card when discharging to keypad, T-flash connector and gap at air >7KV.
For these problems, the solutions are as follow,
Problem 1 improvement:
Increase the GND area of the battery’s cathode by scraping the green painting near the cathode to expose more GND and linking the cathode with the exposed GND by solder.
After improvement, it is OK for ESD at contact 6KV on the I/O connector.
Problem 2 improvement:
Link the metal panel of the back cover with the SIM card shielding cover by conductive fabric,
After improvement, it is OK for ESD at air 10KV on the position of T-flash connector.
Problem 3 improvement:
Link the metal panel of the back cover with the SIM card shielding cover by conductive fabric,
After improvement, it is OK for ESD at air 10KV on the position of keypad, T-flash connector and gap.
After modifications above, the mobile can pass air 10KV and contact 6KV.
【文件名】:08217-我做过的几个项目ESD解决问题的方法.part1.rar
XPuqKkgc.rar (187.33 KB)
RJyEtsGr.rar
手机大厂的ＥＳＤ经验总结
7KXDae97.rar
手机大厂的ＥＳＤ经验总结
thanks and that material is very good
谢谢鼓励！以后有好的资料会免费和大家共享，这次是因为手头比较紧，不过这个资料应该是超值的。
no money
下了好多回，就是下不了，请楼主帮忙！谢谢
no money
【文件名】:08623-08217-我做过的几个项目ESD解决问题的方法[1].part1.rar
e7Peq8aT.rar (1000.39 KB)
顶楼上的！
顶Jasonliu！好人！
支持！
支持！
ok, 严重支持
多谢多谢！
的确不错，谢谢楼主
谢谢，的确不错
look forward to get enough money and study it！
thank you for you free information
支持面粉的。
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