- 易迪拓培训,专注于微波、射频、天线设计工程师的培养
deembed in ads
录入:edatop.com 点击:
hi,all
i've got the S parameters by the VNA ,but we only have the "open" and "through" deembed layout graph,so how can i get the intrinsic device S parameters.
we can subtract the paracisic capacitor by "open",but how can i subtract the resistor and inductor by "through" .please check my way as follows:
1. Smeas-->Ymeas,Sthru-->Ythru,Sopen-->Yopen
2.Y1=Ymeas-Yopen,Y2=Ythru-Yopen
3.Y1-->Z1,Y2-->Z2
4.Z11=Z1(11)-0.5*Z2(11)
Z12=Z1(12)
Z21=Z1(21)
Z22=Z1(22)-0.5*Z2(22)
5.Z-->S
sorry ,my english is not good ,hope you can get it!
thanks for your advise !
i've got the S parameters by the VNA ,but we only have the "open" and "through" deembed layout graph,so how can i get the intrinsic device S parameters.
we can subtract the paracisic capacitor by "open",but how can i subtract the resistor and inductor by "through" .please check my way as follows:
1. Smeas-->Ymeas,Sthru-->Ythru,Sopen-->Yopen
2.Y1=Ymeas-Yopen,Y2=Ythru-Yopen
3.Y1-->Z1,Y2-->Z2
4.Z11=Z1(11)-0.5*Z2(11)
Z12=Z1(12)
Z21=Z1(21)
Z22=Z1(22)-0.5*Z2(22)
5.Z-->S
sorry ,my english is not good ,hope you can get it!
thanks for your advise !
Y12 will give the through calculations
申明:网友回复良莠不齐,仅供参考。如需专业帮助,请学习易迪拓培训专家讲授的ADS视频培训课程。
ADS培训课程推荐详情>>
国内最全面、最专业的Agilent ADS培训课程,可以帮助您从零开始,全面系统学习ADS设计应用【More..】
- Agilent ADS教学培训课程套装
- 两周学会ADS2011、ADS2013视频教程
- ADS2012、ADS2013射频电路设计详解
- ADS高低阻抗线微带滤波器设计培训教程
- ADS混频器仿真分析实例视频培训课程
- ADS Momentum电磁仿真设计视频课程
- ADS射频电路与通信系统设计高级培训
- ADS Layout和电磁仿真设计培训视频
- ADS Workspace and Simulators Training Course
- ADS Circuit Simulation Training Course
- ADS Layout and EM Simulation Training Course
- Agilent ADS 内部原版培训教材合集