- 易迪拓培训,专注于微波、射频、天线设计工程师的培养
nonlinear mosfet ads
Im currently designig a Switch Mode Power Amplifier in UMC 0,18 tecnology.
I want to determinate the Vt, Cds, Cgd, resistence on and Ft of a Mosfet Transistor. How can i do it with ADS? What type of Analysis? LSSP? How?
I know that for large signals the typical model of Mos isn't apllied, and there are many discordance in non-linear models.
I appreciate all the help! Thanks
Ricardo
hi,
Cgs and Cgd are nonlinear capacitances, values move with the voltage applied.
You can only find the small signal values of these elements by performing LSSP simulation. You can do this by extracting [Y] parameters of the transistor.
Do you need more information or you know how to compute?
Hi,
im extracting [Y] parameters, using the example project ..\examples\MW_Ckts\LargeSigAmp_prj with my transistor model
Im assuming that Cds=Im(Y22)/2Pi, Cgs=Im(Y11)/2Pi and Cgd=-Im(Y12)/2Pi.
So far i have no problem, anything i will send you a message.
Thank you so much for the reply.
Ricardo
FYI I just heard that Agilent is developing an X-Parameter tester which
will test a large signal device and create a Large Signal model to use
in ADS.
Cheers
it's interesting subject, i'm student in RF design but new! pls, i did not understand how can you extract Y paramters from :
using the example project ..\examples\MW_Ckts\LargeSigAmp_prj
furthermore, i have another pb with message error shown below:
tahb_HB1 : unable to load ATHAB of type model extractor
could you help me pls .......
thx in advance
m
Check out the thesis in Annex. In section 5.5 shows how to extract the parameters using ADS.
I hope in the end of the week post my project here!
About the error i think its something about your netlist file, but im not sure.
Hope i can help you,
Ricardo
hi, thnkx a lot for submitting to me a thesis... i hope that i will find the answer...
thx again
M
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