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It is a power mosfet from international rectifier, how can I use it in ADS? Thanks.

M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
* RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.56362 LAMBDA=0.00291031 KP=25.0081
+CGSO=1.60584e-05 CGDO=4.25919e-07
RS 8 3 0.0317085
D1 3 1 MD
.MODEL MD D IS=1.02194e-10 RS=0.00968022 N=1.21527 BV=100
+IBV=0.00025 EG=1.2 XTI=3.03885 TT=1e-07
+CJO=1.81859e-09 VJ=1.1279 M=0.449161 FC=0.5
RDS 3 1 4e+06
RD 9 1 0.0135649
RG 2 7 5.11362
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50
+CJO=2.49697e-09 VJ=0.5 M=0.9 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.4 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 2.49697e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.4
.ENDS

which format is this PSpice or HSpice?

* Model format: SPICE3

It's level 1 model in your netlist, not so complicate, en. You can just use Level1_Model from ADS, then modify the parameters' values.

But if for Bsim3 model, for example, it will be so complicated using this methods because there are so many paramters needed to be filled. Device models are provided from foundry in Spice format, Cadence format, ADS format, etc... for different simulators.

simply

1 ) open a project

2) open new schamatic window

3) from file menu , select import

4) select spice netlist

5) from more options , select the nelist type "hspice" , spice 35 , and so on

6) check the box to translate it into ADS nelist file

7) ads will translate the model file , file with the same name but .net

8) in ur circuit put netlist include component , and browse the new model fiel generated by ads

and enjoy the simulation

khouly

thanks, i imported the netlist. but got an error durring the simulation:

Error detected by hpeesofsim during netlist flattening.
`X1.mm': Substrate doping is less than ni.

How can I ignore this error?

the netlist is:

======================

; Translated with ADS Netlist Translator (*) 290.400 Aug 6 2005
define irf540 ( _node1 _node2 _node3)
;*************************************
; Model Generated by MODPEX *
;Copyright(c) Symmetry Design Systems*
; All Rights Reserved *
; UNPUBLISHED LICENSED SOFTWARE *
; Contains Proprietary Information *
; Which is The Property of *
; SYMMETRY OR ITS LICENSORS *
;Commercial Use or Resale Restricted *
; by Symmetry License Agreement *
;*************************************
; Model generated on Apr 24, 96
; Model format: SPICE3
; Symmetry POWER MOS Model (Version 1.0)
; External Node Designations
; Node 1 -> Drain
; Node 2 -> Gate
; Node 3 -> Source
mm:m1 _node9 _node7 _node8 _node8 Length=100u Width=100u Mode=1
; Default values used in MM:
; The voltage-dependent capacitances are
; not included. Other default values are:
; RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
model mm MOSFET Is=1e-32 Vto=3.56362 Lambda=0.00291031 Kp=25.0081 Cgso=1.60584e-05 Cgdo=4.25919e-07 \
NMOS=1 PMOS=0 Idsmod=1 Capmod=1 Phi=0.50 Mjsw=0.50 Nsub=0.50 Tnom=27
R:rs _node8 _node3 R=0.0317085
md:d1 _node3 _node1 Mode=1
model md Diode Is=1.02194e-10 Rs=0.00968022 N=1.21527 Bv=100 Ibv=0.00025 Eg=1.2 Xti=3.03885 \
Tt=1e-07 Cjo=1.81859e-09 Vj=1.1279 M=0.449161 Fc=0.5 Tnom=27
R:rds _node3 _node1 R=4e+06
R:rd _node9 _node1 R=0.0135649
R:rg _node2 _node7 R=5.11362
md1:d2 _node4 _node5 Mode=1
; Default values used in MD1:
; RS=0 EG=1.11 XTI=3.0 TT=0
; BV=infinite IBV=1mA
model md1 Diode Is=1e-32 N=50 Cjo=2.49697e-09 Vj=0.5 M=0.9 Fc=1e-08 Tnom=27
md2:d3 0 _node5 Mode=1
; Default values used in MD2:
; EG=1.11 XTI=3.0 TT=0 CJO=0
; BV=infinite IBV=1mA
model md2 Diode Is=1e-10 N=0.4 Rs=3e-06 Tnom=27
R:rl _node5 _node10 R=1
SDD:fi2 _node7 _node9 I[1,0]=-1*_c1 C[1]="vfi2"
V_Source:vfi2 _node4 0 Vdc=0
SDD:ev16 _node9 _node7 _node10 0 I[1,0]=0 F[2,0]=(1*_v1)-_v2
C:cap _node11 _node10 C=2.49697e-09
SDD:fi1 _node7 _node9 I[1,0]=-1*_c1 C[1]="vfi1"
V_Source:vfi1 _node11 _node6 Vdc=0
R:rcap _node6 _node10 R=1
md3:d4 0 _node6 Mode=1
; Default values used in MD3:
; EG=1.11 XTI=3.0 TT=0 CJO=0
; RS=0 BV=infinite IBV=1mA
model md3 Diode Is=1e-10 N=0.4 Tnom=27
end irf540

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