基于数字采样示波器的InGaAsP单光子雪崩二极管的特性

基于数字采样示波器的InGaAsP单光子雪崩二极管的特性

内容简介：介绍了由带尾纤的InGaAs/InP雪崩光电二极管建立的近红外单光子探测系统.使用带宽50GHz的数字采样示波器,首次直观地展现了门模式(即盖革模式)工作状态下,单光子探测的模式和过程.并且在波长分别为1310和1550nm的情况下进行了定量研究.在1550nm,工作温度203K条件下,该探测器达到了暗计数概率2.4×10-3每门,量子效率52%,50kHZ的门信号重复频率;在工作温度为238K时,相应参数分别为8.5×10-3,43%和200kHz.

Abstract：A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes. With a 50GHz digital sampling oscilloscope, the function and process of gated-mode (Geiger-mode)single-photon detection are intuitionally demonstrated for the first time. The performance of the detector as a gated-mode single-photon counter at wavelengths of 1310 and 1550nm is investigated. At the operation temperature of 203K,a quantum efficiency of 52% with a dark count probability per gate of 2.4 × 10-3 ,and a gate pulse repetition rate of 50kHz are obtained at 1550nm. The corresponding parameters are 43%, 8.5 × 10-3, and 200kHz at 238K.

作者：刘伟, 杨富华, 吴孟,

关键词：InGaAsP单光子雪崩二极管, 50GHz数字采样示波器, 门模式