X波段GaN五位数字移相器MMIC的设计

X波段GaN五位数字移相器MMIC的设计

内容简介：采用0.5μm GaN HEMT工艺设计了X波段五位数字移相器的单片微波集成电路(MMIC),描述了移相器的设计过程,并进行了版图电磁仿真。该移相器采用高低通滤波器型网络和加载线型结构。利用电路匹配技术设计移相器电路的开关结构,将GaN器件的插入损耗从14 dB降至1 dB。版图仿真结果表明,在9.2 GHz~10.2 GHz频带范围内,均方根移相误差小于3.5o,插入损耗典型值为17.4 dB,回波损耗小于-12 dB,版图尺寸为5.0 mm×4.7 mm。

Abstract：An X band 5 bit Digital phase shifter monolithic microwave integrated circuit ( MMIC ) is designed using 0. 5 μm GaN HEMT process. The design procedure is described, and the layout electromagnetic simulation is operated. The phase shifter is based on the synthetic design of a high-pass/low-pass filters network and the loaded-line structure. A switch topology of the phase shifter is designed by matching network, which reduced the loss insertion of GaN device from 14 dB to 1 dB. The layout simulation result shows that the phase shifter has achieved root mean square(RMS)phase shift error less than 3. 5,the average insertion loss of 17. 4 dB,and the return loss better than -12 dB within 9. 2 GHz~10. 2 GHz bandwidth. The layout size is 5. 0 mmí4. 7 mm.

作者：张霍, 马佩军, 罗卫军, 姜元祺, 刘新宇,

关键词：射频电路设计, 仿真, 数字移相器, X波段, 氮化镓, 单片微波集成电路,